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USE OF A HOT WIRE CHEMICAL VAPOR DEPOSITION SYSTEM FOR MANUFACTURING AMORPHOUS SILICON PHOTORECEPTORS

IP.com Disclosure Number: IPCOM000027608D
Original Publication Date: 1998-Feb-28
Included in the Prior Art Database: 2004-Apr-08
Document File: 2 page(s) / 59K

Publishing Venue

Xerox Disclosure Journal

Abstract

Disclosed is a method and apparatus for controlled Chemical Vapor Deposition (CVD) of amorphous silicon onto suitable substrates for preparing xerographic photoreceptors and related devices. Hot wire CVD methods are known and have been used for the preparation of, for example, diamond-like carbon coatings, flat panel displays, and solar cells. In conventional manufacturing of amorphous silicon containing photoreceptors, for example, by sublimation low deposition rates, control of hydrogen content, and the high temperatures necessary for deposition create substantial quality and technical difficulties. Hot wire CVD permits amorphous silicon to be deposited on substrates at high rates, at low temperatures, and with well controlled hydrogen profiles. In an example, a commercially available hot wire deposition system for MV Systems Inc., is modified with a feedthrough for rotary motion of a photoreceptor substrate such as a drum or belted mandrel within the deposition chamber. Feed gas composition, flow rates and pumping speed are controlled to a high degree to permit formation of a uniform film with a well defined composition.

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XEROX DISCLOSURE JOURNAL

USE OF A HOT WIRE CHEMICAL VAPOR DEPOSITION SYSTEM FOR MANU- FACTURING AMORPHOUS SILICON PHOTORECEPTORS
Thomas P. Debies

Proposed Classification
U. S. C1.430/066 Int. C1. G03g 15/04

Disclosed is a method and apparatus for controlled Chemical Vapor Deposition (CVD) of amorphous silicon onto suitable substrates for preparing xerographic photoreceptors and related devices. Hot wire CVD methods are known and have been used for the preparation of, for example, diamond-like carbon coatings, flat panel displays, and solar cells. In conventional manufacturing of amorphous silicon containing photoreceptors, for example, by sublimation low deposition rates, control of hydrogen content, and the high temperatures necessary for deposition create substantial quality and technical difficulties. Hot wire CVD permits amorphous silicon to be deposited on substrates at high rates, at low temperatures, and with well controlled hydrogen profiles. In an example, a commercially available hot wire deposition system for MV Systems Inc., is modified with a feedthrough for rotary motion of a photoreceptor substrate such as a drum or belted mandrel within the deposition chamber. Feed gas composition, flow rates and pumping speed are controlled to a high degree to permit formation of a uniform film with a well defined composition.

DP5624

XEROX DISCLOSURE JOURNAL - Vol. 23, No. 1 JanuarylFebruary 1998 57

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