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Method for low power, low temperature oxide for a polished ILD

IP.com Disclosure Number: IPCOM000030170D
Publication Date: 2004-Jul-30
Document File: 3 page(s) / 97K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for low power, low temperature oxide for a polished interlayer dielectric (ILD). Benefits include improved functionality and improved performance.

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Method for low power, low temperature oxide for a polished ILD

Disclosed is a method for low power, low temperature oxide for a polished interlayer dielectric (ILD). Benefits include improved functionality and improved performance.

Background

      The manufacture of ferroelectric polymer-based memory has created a requirement for a process that deposits a low-temperature dielectric at low power. The deposited ILD must not damage the ferroelectric polymer’s properties and must be capable of being polished without delamination.

      No technology previous to ferroelectric polymer-based memory has required a process with these characteristics. Conventional processes have used spin on glass (SOG), other deposited oxides, or organic materials.

General description

      The disclosed method deposits an oxide at low power and low temperature that can be polished for interlayer dielectric (ILD) use in the manufacture of the ferroelectric polymer-based memory.

              The key element of the disclosed method include:

•             Use of low power

•             Low temperature (below 120°C)

•             Oxide that can be polished without delamination

•             Oxide that does not damage the ferroelectric polymer

Advantages

              The disclosed method provides advantages, including:
•             Improved functionality due to providing an ILD that meets the requirements for the manufacture of ferroelectric polymer-based memory
•             Improved performance due to not delaminating when polished

•             Improved performance due to not dama...