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DUAL GMR WITH SINGLE SELF-PINNED LAYER

IP.com Disclosure Number: IPCOM000031480D
Publication Date: 2004-Sep-27
Document File: 1 page(s) / 9K

Publishing Venue

The IP.com Prior Art Database

Abstract

This is a dual GMR sensor where a self-pinned layer is used between the free layers.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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THIS COPY WAS MADE FROM AN INTERNAL HITACHI DOCUMENT AND NOT FROM THE PUBLISHED BOOK

HSJ820030045 Lew Nunnelley/US/HGST Harry Gill

DUAL GMR WITH SINGLE SELF-PINNED LAYER

The structure is as follows:

Ta/NiFeCr/NiFe/CoFe/Cu/CoFe/Ru/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Ta The middle three CoFe layers are self-pinned by stress induced magnetic anisotropy from high positive magnetostriction of CoFe and compressive stress at the ABS of the head.

Disclosed by Hitachi Corporation

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