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Low parasitic resistance structure for the dual CPP GMR

IP.com Disclosure Number: IPCOM000031483D
Publication Date: 2004-Sep-27
Document File: 2 page(s) / 18K

Publishing Venue

The IP.com Prior Art Database

Abstract

Large parasitic resistance from the antiferromagnetic pinning layers lower the magnetoresistance for the CPP GMR sensor. We disclose a structure to lower the parasitic resistance. The pinning layers, the antiferromagnetic layers, and portions of the ferromagnetic pinned layers are extended in the track width and stripe height direction to decrease the resistance contribution from these layers. The calculation shows 20% reduction in parasitic resistance for this structure.

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THIS COPY WAS MADE FROM AN INTERNAL HITACHI DOCUMENT AND NOT FROM THE PUBLISHED BOOK

HSJ820040247 Lew Nunnelley/US/HGST Harry Gill, David Hsiao

Low parasitic resistance structure for the dual CPP GMR

The structure is as follows:

Bottom shield/NiFeCr/NiFe/IrMn/CoFe/Ru/CoFe/Cu/CoFe/NiFe/CoFe/Cu/CoFe/Ru/CoFe/Pt Mn/Ta/Ru/Top shield/

The antiferromagnets (IrMn and PtMn) as well as the ferromagnet pinned layers

  (CoFe/Ru/CoFe) are extended in both track width and stripe height directions. The extension for the bottom layers is achieved by partial mill process whereas the extended top layers are deposited after main sensor definition and then coupling the top pinned layer to the pinned layer in the defined sensor. The structure is shown in attachment.

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Disclosed by Hitachi Corporation

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