Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Reducing the Thermal Budget and Annealing Temperature of Spin-On Dielectrics For STI-Related Applications

IP.com Disclosure Number: IPCOM000032208D
Publication Date: 2004-Oct-26
Document File: 1 page(s) / 25K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that applies radiation treatments (e.g. E-beam, UV, or Plasma) in association with thermal curing methods to convert the spin-on dielectric (SOD) to high quality SiO2 for STI applications. Benefits include reducing annealing temperatures.

This text was extracted from a Microsoft Word document.
This is the abbreviated version, containing approximately 91% of the total text.

Reducing the Thermal Budget and Annealing Temperature of Spin-On Dielectrics For STI-Related Applications

Disclosed is a method that applies radiation treatments (e.g. E-beam, UV, or Plasma) in association with thermal curing methods to convert the spin-on dielectric (SOD) to high quality SiO2 for STI applications. Benefits include reducing annealing temperatures.

Background

Higher annealing temperatures are required for the SOD to achieve a high quality SiO2 for STI applications. However, these higher temperatures can oxidize the silicon substrate, which is not desired for STI and Front End (FE) applications.

The current state of the art anneals the SOD at  > 800°C for over 30 minutes (in a steam environment), or at > 900°C for over one hour (in an N2 environment). High thermal budget/annealing temperatures of > 800°C are a concern for STI  applications; radiation sources (e.g. E-beam, UV, or Plasma) normally cure the SOD at < 400°C.

General Description

The disclosed method applies radiation treatment (e.g. E-beam, UV, or Plasma) in association with the thermal curing method to convert the SOD to SiO2-like structures for the STI applications. The radiation sources are typically used for assisted curing, pre-treatment, or post-treatment methods, to enhance the conversation of the SOD SiO-X bonds to Si-O bonds. Reducing the thermal budget in the STI annealing process produces SiO2 films of necessary high quality without further oxidation of the silicon substrate.

Advant...