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New Formulation of Spin-On Dielectric for STI-Related Applications

IP.com Disclosure Number: IPCOM000032209D
Publication Date: 2004-Oct-26
Document File: 1 page(s) / 25K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that uses SiO2 nano-particles (i.e. silica) in the spin-on dielectric (SOD) for STI applications. Benefits include reducing anneal temperatures.

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New Formulation of Spin-On Dielectric for STI-Related Applications

Disclosed is a method that uses SiO2 nano-particles (i.e. silica) in the spin-on dielectric (SOD) for STI applications. Benefits include reducing anneal temperatures.

Background

SOD is being investigated as an STI fill alternative.  Currently, there is a problem with the low density of SOD in the STI trench, compared with the area above the trench. A high thermal budget and higher annealing temperatures can increase this density, but can also oxidize the silicon substrate, which is not desired for the STI and other Front End (FE) applications.

SiO2 nanoparticles are already used in non-SOD applications.  Nano-particles can be formed using an electro-spray (e-spray). The e-spray method applies liquid precursors into the high temperature flame to allow the gas phase reaction and nucleation form the nano-particles. The nano-particle can be manufactured at various temperatures (i.e. 700, 800, 900, or 1000°C etc.) and in various environments (i.e. N2, O2, H2/N2, O3, etc.). 

General Description

The disclosed method incorporates SiO2 nano-particles (i.e. silica) in the SOD for STI applications. By blending nano-particles into the SOD solution, the amount of film shrinkage and porosity in the deep trench after annealing can be reduced. In addition, it requires a lower anneal temperature or time to achieve similar or better SiO2 densities, as compared to the traditional SOD.  This same technology should also appl...