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Method for photonically induced bottom up CVD fill

IP.com Disclosure Number: IPCOM000032211D
Publication Date: 2004-Oct-26
Document File: 2 page(s) / 19K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for photonically induced bottom up chemical vapor deposition (CVD) fill. Benefits include improved functionality, improved performance, and improved design flexibility.

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Method for photonically induced bottom up CVD fill

Disclosed is a method for photonically induced bottom up chemical vapor deposition (CVD) fill. Benefits include improved functionality, improved performance, and improved design flexibility.

Background

              Voiding from conformal coverage of CVD films causes pinch off in less than ideal trench profiles. This problem is conventionally solved by using electroless plating, which has similar fill characteristics.

      Conventionally, sputter films lack bottom coverage in deep trenches.

General description

      The disclosed method uses sputtered metal reflection to cause temperature differences between the top and bottom of high aspect ratio trenches. As a result, the trench bottoms heat preferentially, leading to faster deposition rates at the bottom of high aspect ratio trenches.

              The key elements of the disclosed method include:

•             Sputtered metallic film that coats the field area preferentially at the trench bottom

•             Photonic-based heat source from a lamp or laser

•             CVD process

Advantages

              The disclosed method provides advantages, including:
•             Improved functionality due to providing CVD films using gas/solid reactions
•             Improved functionality due to providing improved film coverage at the bottom of deep trenches

•             Improved performance due to providing cleaner films

•             Improved design flexibility due to enabling mo...