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Magnetic Tunnel Transistor structure with stabilized free layer

IP.com Disclosure Number: IPCOM000032419D
Publication Date: 2004-Nov-04
Document File: 1 page(s) / 33K

Publishing Venue

The IP.com Prior Art Database

Abstract

We show a structure for the magnetic tunnel transistor (MTT). The free layer is stabilized by forming antiparallel tabs at the ends of the free layer. These tabs stabilize the free layer as well as avoid any side reading. The extension of the free layer in the track width direction allows external electrical connection to the free layer (Transistor base) without side reading problem.

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Magnetic Tunnel Transistor structure with stabilized free layer

The structure is shown below:

Disclosed by Hitachi Corporation

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