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Method for a stitched via transformer for RF packaging

IP.com Disclosure Number: IPCOM000033143D
Publication Date: 2004-Nov-29
Document File: 3 page(s) / 28K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for a stitched via transformer for radio-frequency (RF) packaging. Benefits include improved functionality and improved performance.

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Method for a stitched via transformer for RF packaging

Disclosed is a method for a stitched via transformer for radio-frequency (RF) packaging. Benefits include improved functionality and improved performance.

Background

      RF and microwave devices require more compact and multifunctional integrated modules with efficient, low cost packages. Embedded inductors, resistors, transformers, and baluns provide matching, filtering, and biasing circuitry. One of the biggest challenges is to maintain package size while accommodating ever-increasing functionality. Particularly challenging is the high area requirement by embedded transformers.

              A conventional stacked transformer that occupies an area of 1‑mm by 0.3‑mm outputs self-inductance of 1.4e-9 Henry. It has a mutual coupling coefficient, k (=M/Ö(L1*L2)) of 0.35 (see Figure 1).

              Conventional technology offers stacked transformers as the best available embedded-transformer solution. One drawback of this transformer is the large area required.

General description

 

      The disclosed method is routing with stitching vias. The method requires a reduced on-chip area. The stitching vias provide higher mutual inductance, canceling most of the self-inductance of the individual structure. The close coupling of the stitch vias provide equivalent if not better (depending on minimum via pitch allowable by design rule) mutual coupling.

Advantages

              The disclosed method provides advantages, in...