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Measuring Local Temperature With Sub-Micrometer Resolution

IP.com Disclosure Number: IPCOM000034035D
Original Publication Date: 1989-Jan-01
Included in the Prior Art Database: 2005-Jan-26
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Ho, PS: AUTHOR [+2]

Abstract

A technique is described whereby the local temperature can be measured so as to give sub-micron lateral resolution. The concept obtains sub-micron lateral resolution through the use of interface kinetic rate of reaction between materials, such as silicon and a silicide forming metal. It is designed to be used in applications which require detection of heat which causes degradation in high density semiconductor integrated circuits. In high density semiconductor integrated circuits, local heating in the chip will often occur during its operation. This heating can be caused by a variety of sources, such as the high current density in the conductor lines, the high resistance at the contact and poor adhesion between conductor lines and substrates of the circuit card. The local heating can cause device degradation.

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Measuring Local Temperature With Sub-Micrometer Resolution

A technique is described whereby the local temperature can be measured so as to give sub-micron lateral resolution. The concept obtains sub-micron lateral resolution through the use of interface kinetic rate of reaction between materials, such as silicon and a silicide forming metal. It is designed to be used in applications which require detection of heat which causes degradation in high density semiconductor integrated circuits. In high density semiconductor integrated circuits, local heating in the chip will often occur during its operation. This heating can be caused by a variety of sources, such as the high current density in the conductor lines, the high resistance at the contact and poor adhesion between conductor lines and substrates of the circuit card. The local heating can cause device degradation. As device dimensions continue to reduce, the need to measure local temperature increases, particularly measurements requiring high spatial resolution. The concept described herein utilizes a thin film sandwich of silicon and a metal in contact with the localized heat source. In general, there is a temperature range where the kinetic rate of material reaction is of a suitable magnitude for this type of application. For different metals, this temperature range can vary such that the phase formed depends on the temperature. The formation of a silicide and its phase can then be used as a temperature sens...