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Improved Bonding of VLSI Packaging Through the Use of Lithiated Polymides

IP.com Disclosure Number: IPCOM000034415D
Original Publication Date: 1989-Feb-01
Included in the Prior Art Database: 2005-Jan-27
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

De Hodgins, OC: AUTHOR [+4]

Abstract

A technique is described whereby bonding of ceramic and metal polymides, as used in very large scale integrated (VLSI) circuit packaging, is improved through the use of lithiated polymides. Discussed is the fabrication method used to improve the characteristics of the polymide interlayer, so as to optimize the interface adhesion. In prior art, a compromise was typically implemented so as to avoid delamination at the ceramic/metal interface during fabrication of VLSI circuit packages. Using polymeric materials provided a two-fold objective. First, the material as a filler of ceramic pores and second, to function as an intermediate layer between the ceramic and the metal. The polymeric material was required to withstand high temperatures, as well as several temperature cycles.

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Improved Bonding of VLSI Packaging Through the Use of Lithiated Polymides

A technique is described whereby bonding of ceramic and metal polymides, as used in very large scale integrated (VLSI) circuit packaging, is improved through the use of lithiated polymides. Discussed is the fabrication method used to improve the characteristics of the polymide interlayer, so as to optimize the interface adhesion. In prior art, a compromise was typically implemented so as to avoid delamination at the ceramic/metal interface during fabrication of VLSI circuit packages. Using polymeric materials provided a two-fold objective. First, the material as a filler of ceramic pores and second, to function as an intermediate layer between the ceramic and the metal. The polymeric material was required to withstand high temperatures, as well as several temperature cycles. Unfortunately, polymeric materials, such as polymide isoindoquinazolinedione (PIQ), which had high heat resistance, low dielectric constant and good mechanical and electrical properties, did not provide good adhesion, since the characteristics of the resultant ceramic (the pores) decreased the contact at the interface. Also, the fabrication process generated stresses, which concentrated at the interface, due to the difference in coefficients of thermal expansion of the ceramic, polymide and metal. The concept described herein improves the characteristics of the polymide interlayer and provides better adhesion by means o...