Browse Prior Art Database

Method of Producing Silicon Oxynitride Layers

IP.com Disclosure Number: IPCOM000034631D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Briska, M: AUTHOR [+5]

Abstract

A method is described for producing silicon oxynitride layers. Pretreated silicon wafers are exposed to an oxidizing atmosphere in which, using a prior-art process, an oxide layer of about 5 to 30 nm thickness is thermally grown on the wafer surfaces. Then, by standard LPCVD (Low Pressure Chemical Vapor Deposition), the wafers are provided with an about 33 nm thick Si(x)N(y)C(z) layer. This SiNC compound is obtained by using the gas components; C2HCl3 50 sccm NH3 120 sccm SiH2Cl2 12 sccm Depending upon the vacuum configuration, the time required for this part of the process is about 20 minutes at an operating pressure of about 200 mbar. During this time an Si-O-N layer is formed at the Si/SiO2 interface, as could be proved by Auger depth profile measurement.

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Method of Producing Silicon Oxynitride Layers

A method is described for producing silicon oxynitride layers. Pretreated silicon wafers are exposed to an oxidizing atmosphere in which, using a prior-art process, an oxide layer of about 5 to 30 nm thickness is thermally grown on the wafer surfaces. Then, by standard LPCVD (Low Pressure Chemical Vapor Deposition), the wafers are provided with an about 33 nm thick Si(x)N(y)C(z) layer. This SiNC compound is obtained by using the gas components; C2HCl3 50 sccm

NH3 120 sccm

SiH2Cl2 12 sccm Depending upon the vacuum configuration, the time required for this part of the process is about 20 minutes at an operating pressure of about 200 mbar. During this time an Si-O-N layer is formed at the Si/SiO2 interface, as could be proved by Auger depth profile measurement. The Si-O-N layer is bared by etching off the SiNC and the SiO2 layer, using 185oC hot phosphoric acid and buffered hydrofluoric acid, respectively. By means of this method, highly homogeneous Si-O-N layers with favorable electrical insulation properties are obtained.

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