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Characterizing Photolithographic Chromium Masks

IP.com Disclosure Number: IPCOM000034651D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-27
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Dahmen, M: AUTHOR [+4]

Abstract

Photolithographic masks for imaging finest structures during the production of semiconductor devices generally consist of a thin chromium layer which is deposited on a quartz substrate. The mask structures are photolithographically transferred to the chromium layer. Important characteristics of the finished photolithographic masks are that the dimensions and tolerances of the structures imaged on their surface are accurate, which depends in particular on the imaging system (artwork generator, stepper) used. The imaging system is characterized by optically measuring a large number of structures on a test mask produced by the imaging system for this purpose.

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Characterizing Photolithographic Chromium Masks

Photolithographic masks for imaging finest structures during the production of semiconductor devices generally consist of a thin chromium layer which is deposited on a quartz substrate. The mask structures are photolithographically transferred to the chromium layer. Important characteristics of the finished photolithographic masks are that the dimensions and tolerances of the structures imaged on their surface are accurate, which depends in particular on the imaging system (artwork generator, stepper) used. The imaging system is characterized by optically measuring a large number of structures on a test mask produced by the imaging system for this purpose. According to the invention, it is proposed that the dimensional accuracy of the system used for mask production be characterized by a method which provides for the electrical layer resistance to be measured directly on the electrically conductive chromium layer of the photolithographic mask. In semiconductor technology, the method of electrical layer resistance measurement is generally used to determine the layer resistance, the dimensional accuracy of the photolithographic image, lateral outdiffusion of dopants, etc., on silicon wafers rather than the dimensions on photolithographic masks. The structures proposed for this purpose are pairs of chromium stripes extending in the X- and the Y-direction, whose widths differ enormously but whose nominal resistance values are made identical by usi...