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Electron Beam and Deep Ultraviolet Sensitive Silmethylene Resists

IP.com Disclosure Number: IPCOM000034741D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-27
Document File: 4 page(s) / 65K

Publishing Venue

IBM

Related People

Babich, E: AUTHOR [+4]

Abstract

A group of polymers is described whereby E-beam and deep UV sensitive polysilmethylenes are working as negative and positive tone resist materials. The structures of these polymers are described, as well as the advantages of using simethylene resist materials over polysiloxanes. Also, a new polymer photodegradation process, based upon "b-decay" of C-substituted polysilmethylenes is found. The high stability of silmethylene polymers to oxygen plasmas makes them useful as thin top imageable layers, for image transfer to thick planarizing bottom layers, so as to fabricate high resolution submicron patterns using a double layer lithographic technique. The (Image Omitted) structures of the high molecular weight polysilmethylene polymers are shown in Fig. 1.

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Electron Beam and Deep Ultraviolet Sensitive Silmethylene Resists

A group of polymers is described whereby E-beam and deep UV sensitive polysilmethylenes are working as negative and positive tone resist materials. The structures of these polymers are described, as well as the advantages of using simethylene resist materials over polysiloxanes. Also, a new polymer photodegradation process, based upon "b-decay" of C-substituted polysilmethylenes is found. The high stability of silmethylene polymers to oxygen plasmas makes them useful as thin top imageable layers, for image transfer to thick planarizing bottom layers, so as to fabricate high resolution submicron patterns using a double layer lithographic technique. The

(Image Omitted)

structures of the high molecular weight polysilmethylene polymers are shown in Fig. 1. The polymers are prepared by means of thermal or catalytic polymerization reactions of silacyclobutane monomers, as shown in Fig. 2. The silmethylene polymers are sensitive to E-beam irradiation and similar to polydimethylsiloxane (PDMS) materials work as negative tone (crosslineable) resists. For example, two structures are explored: a) A soluble polymer film (2000-3000 angstroms) with the

structure of poly-1,1,3 - trimethyl-1-silacyclobutane -

with the molecular weight of approximately 2.7 x 106,

has the sensitivity of approximately 0.3 - 0.5 mC/cm at

20 KeV with the contrast (gamma) of "one". This

(Image Omitted)

corresponds to the sensitivity of approximately 1 mC/cm

at 50 KeV. When a double layer technique with an oxygen

plasma image transfer is used, submicron patterns are

resolved with high fidelity.

b) A polymer with the structure of 1,1,3,3-tetramethyl-

1,3-disilacyclobuta...