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INTEGRATED CONTROL GRIDS FOR CRTs

IP.com Disclosure Number: IPCOM000034861D
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-27
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Brown, AV: AUTHOR [+2]

Abstract

An integrated grid structure to produce and cut off multiple electron beams from a single cathode can be made using a variety of metals and insulators by photoresist techniques. A particular system using sapphire and tungsten is illustrated. Alignment of the front electrodes to the back hole and overhang of the front electrode, desirable to reduce insulator charging, both derive automatically from this technique. Both sides of a sapphire wafer 10 are coated with a metal 12, 14 suitable for use as an electrode in a vacuum device (i.e., no electron emission, and stable at high temperatures). Clear areas 16 are left on the top surface as shown in Fig. 1. The metal 14 on the back side is etched into the desired pattern for the holes to be etched into the sapphire 10.

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INTEGRATED CONTROL GRIDS FOR CRTs

An integrated grid structure to produce and cut off multiple electron beams from a single cathode can be made using a variety of metals and insulators by photoresist techniques. A particular system using sapphire and tungsten is illustrated. Alignment of the front electrodes to the back hole and overhang of the front electrode, desirable to reduce insulator charging, both derive automatically from this technique. Both sides of a sapphire wafer 10 are coated with a metal 12, 14 suitable for use as an electrode in a vacuum device (i.e., no electron emission, and stable at high temperatures).

Clear areas 16 are left on the top surface as shown in Fig. 1. The metal 14 on the back side is etched into the desired pattern for the holes to be etched into the sapphire 10. An eximer laser is used to drill the holes in using the pattern in metal 14 as a mask (Fig. 2).

The outer alignment holes 18 go right through. The grid holes 20 are blind, stopping at the metal. A pattern is then etched into the top metal pattern, using the alignment holes 18 to register the hole 22 in the grid metal 12 to the hole 20 in the insulator (Fig. 3).

Because the only holes in the top surface are placed on the edge, the wafer acts as though it was being used as a featureless surface. Eximer laser etching, particularly at 193 nm [*], is rapid and produces vertical-walled patterns. Tungsten, among other materials, gives a very low etch rate, providing the require...