Browse Prior Art Database

Symmetric RIE Mechanism for Simultaneous Double-Sided Etching (Of a Metal Foil Screening Mask)

IP.com Disclosure Number: IPCOM000034981D
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Kin: AUTHOR [+3]

Abstract

This article describes a mechanism for substantially reducing the time required to RIE (etch) molybdenum (or other metal) foil screening mask by promoting the simultaneous symmetric etching of both sides of the foil. Fig. 1 illustrates presently employed RIE (reactive ion etch) system components, i.e., a grounded electrode (plate) 1, a conductive RF plate 2, and a conductive frame 3 supporting the target foil 4. The etch plasma field 5 shown in Fig. 1 is observed to be operable on both sides of the target foil 4 but, as shown by the Fig. 2 photo, produces an unacceptable asymmetrical etching of the target. The disclosed RIE mechanism, the component configuration for which is illustrated by Fig. 3, overcomes this problem.

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Symmetric RIE Mechanism for Simultaneous Double-Sided Etching (Of a Metal Foil Screening Mask)

This article describes a mechanism for substantially reducing the time required to RIE (etch) molybdenum (or other metal) foil screening mask by promoting the simultaneous symmetric etching of both sides of the foil. Fig. 1 illustrates presently employed RIE (reactive ion etch) system components, i.e., a grounded electrode (plate) 1, a conductive RF plate 2, and a conductive frame 3 supporting the target foil 4. The etch plasma field 5 shown in Fig. 1 is observed to be operable on both sides of the target foil 4 but, as shown by the Fig. 2 photo, produces an unacceptable asymmetrical etching of the target. The disclosed RIE mechanism, the component configuration for which is illustrated by Fig. 3, overcomes this problem. Additional conductive plates, specifically located, sized and supported in the manner shown, permit simultaneous two-sided etching of the target foil. The conductive frame 3 is redesigned so that the metal foil target 4 is located between the conductive plate 2 and another conductive plate 6.

(Image Omitted)

Plates 2 and 6 are so spaced that dimension A = B, thereby creating the two symmetric plasma fields 5 shown above and below the target metal foil and achieving the symmetrical etch shown in the Fig. 4 photo. The disclosed mechanism can be applied to any simultaneous double- sided etching operation to create a specific etch ratio between the two side...