Browse Prior Art Database

Integrated Semiconductor Processing Facilitation by Mobile Ion Gettering During and After Resist Strip

IP.com Disclosure Number: IPCOM000034999D
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 3 page(s) / 59K

Publishing Venue

IBM

Related People

Bakeman, PE: AUTHOR [+3]

Abstract

To gain the benefits of integrated etch and deposition semiconductor processing with multiple process chamber reactive ion etch (RIE) tools, a technique is shown for preventing mobile ions from contaminating device regions during/after resist removal. Integration of reactive ion etch (RIE) processes, e.g., etching, deposition and stripping, have been restricted by concerns over mobile ion contamination. Multiple process chamber RIE equipment has made etching multiple films on a substrate possible, e.g., layers 1, 2 and 3 shown in Fig. 1, requiring different process chemistries (A, B and C). However, special treatment of the photoresist stripping process to prevent mobile ion contamination is required.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 53% of the total text.

Page 1 of 3

Integrated Semiconductor Processing Facilitation by Mobile Ion Gettering During and After Resist Strip

To gain the benefits of integrated etch and deposition semiconductor processing with multiple process chamber reactive ion etch (RIE) tools, a technique is shown for preventing mobile ions from contaminating device regions during/after resist removal. Integration of reactive ion etch (RIE) processes, e.g., etching, deposition and stripping, have been restricted by concerns over mobile ion contamination. Multiple process chamber RIE equipment has made etching multiple films on a substrate possible, e.g., layers 1, 2 and 3 shown in Fig. 1, requiring different process chemistries (A, B and C). However, special treatment of the photoresist stripping process to prevent mobile ion contamination is required. Severe wafer temperature limits during photoresist dry stripping, and the wet dielectric cleaning steps that follow, have prevented sequentially combining resist image transfer by etching with resist stripping subsequent to chemical vapor depositions (CVD) and blanket etch. This problem is solved by mobile ion gettering during or after resist stripping aided by elevated temperatures. Process sequence groupings is possible if layer 1, shown in Fig. 1, is composed of two films where the top film is a substantially pure SiO2 layer, formed by pyrolytic decomposition of tetra-ethyl-oxy-silane (TEOS) or other suitable process, over a similar bottom film containing sufficient phosphorus to getter and trap mobile ions after a heat treatment cycle (>0.1 WT %). The resist strip process may be performed without the maximum temperature limits associated with stripping. Temperatures > 120 degrees C used in many high rate stripping processes are beneficial because the diffusion transport of mobile ions to and entrapment by the phosphorus-doped oxide is en...