Browse Prior Art Database

Thermally-Enhanced High Performance Module

IP.com Disclosure Number: IPCOM000035042D
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Ameen, JG: AUTHOR [+6]

Abstract

A method for manufacturing a multilayer, thin film package containing a heat sink compound and multiple chips using microsurface welding to join a number of thin film circuits is described. Multilayer packaging offers greater performance advantages over discrete single layer packages in that electrical paths are shortened improving the response times of these circuits. One example of such a package is known as a Metallized Ceramic Polyimide (MCP) - having one layer of polyimide. This package depends on sequential processing where the overall yield is obtained by multiplying the individual yields together, resulting in low final yields. Below is described a parallel process which allows for fabricating and testing individual layers before they are joined together.

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Thermally-Enhanced High Performance Module

A method for manufacturing a multilayer, thin film package containing a heat sink compound and multiple chips using microsurface welding to join a number of thin film circuits is described.

Multilayer packaging offers greater performance advantages over discrete single layer packages in that electrical paths are shortened improving the response times of these circuits. One example of such a package is known as a Metallized Ceramic Polyimide (MCP) - having one layer of polyimide. This package depends on sequential processing where the overall yield is obtained by multiplying the individual yields together, resulting in low final yields. Below is described a parallel process which allows for fabricating and testing individual layers before they are joined together. 1) Starting with polyimide thin film circuits

(Decal), laser ablate the polyimide with an eximer

laser forming a 20 mil long opening on the bottom

(base Cr) side of the film, near the outer lead

bond area but not all the way to the end. (The

films are still in their supporting frames.)

2) Plasma etch the polyimide to remove residual

organics.

3) Chip join to the films using standard C-4 joining

technology.

4) Squeegee a heat sink compound under the chip area

on all layers.

5) Align the laser ablated leads and secure frames

with an adhesive such as a 5 minute epoxy. Let

the adhesive cure.

a) A Cu plate may be inserted between the two

layers of polyimide for therm...