Browse Prior Art Database

Enhanced Conventional LPCVD Reactor With Vertical Dispersed Source

IP.com Disclosure Number: IPCOM000035161D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Blum, JM: AUTHOR [+2]

Abstract

Disclosed is a novel design of quartz manifold for the LPCVD reactor tube to minimize gas depletion, improve wafer uniformity, increase wafer throughput and, most important, uniform film properties.

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Enhanced Conventional LPCVD Reactor With Vertical Dispersed Source

Disclosed is a novel design of quartz manifold for the LPCVD reactor tube to minimize gas depletion, improve wafer uniformity, increase wafer throughput and, most important, uniform film properties.

It is well known that gas depletion down the length of the LPCVD furnace tube is normally seen, and it can be compensated by increasing the furnace temperature towards the end of the tube. The temperature difference can be as much as 100oC. This temperature variation causes the change of both physical and electrical film properties. It is proposed that the above problems can be eliminated by inserting a gas exhaust manifold on the top of the tube (see the cross section view of Fig. 1; Fig. 2 shows a side view). The reactant gases come in from two manifolds on the bottom of the tube and flow radially between wafers, then exhaust out through the manifolds on the top of the tube. This offers the following advantages: 1.It greatly eliminates the gas depletion effect and reduces the usage of gases. 2. Since there is no temperature gradient along the length of the tube, it is expected that the entire tube can be utilized for film deposition; therefore, wafer throughput is increased. Most important, the film properties remain the same along the whole furnace.

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3.Since the distance between the input and output of gases is slightly larger than the diameter of the wafers, the temperature across ea...