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FABRICATING A SINGLE-CRYSTAL Si FILM ON AN INSULATOR

IP.com Disclosure Number: IPCOM000035320D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Euen, W: AUTHOR [+2]

Abstract

A polysilicon film on an insulator with seed windows in the latter in suitable places is amorphized by Si+ implantation through the entire thickness of the polysilicon film and to a depth exceeding 10 nm in the underlying single-crystal silicon (100) in places of the seed windows in the insulator.

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FABRICATING A SINGLE-CRYSTAL Si FILM ON AN INSULATOR

A polysilicon film on an insulator with seed windows in the latter in suitable places is amorphized by Si+ implantation through the entire thickness of the polysilicon film and to a depth exceeding 10 nm in the underlying single-crystal silicon (100) in places of the seed windows in the insulator.

By epitaxial regrowth at 600oC, crystallization occurs at 200 nm/minute, starting from the interface to the single-crystal silicon, converting the amorphous Si film in the neighborhood of the seed window to single-crystal Si. This crystallization moves up the tapered seed windows into the silicon on top of the surrounding insulator. Essential is the removal of any native oxide at the former Si(2)/Si(100) interface which inhibits perfect single-crystal recrystallization.

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