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INORGANIC GROWTH OF GaAs AND GaAlAs

IP.com Disclosure Number: IPCOM000035687D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Kuech, TF: AUTHOR [+2]

Abstract

An in-situ alumina coating in a quartz reactor will suppress silicon transport and alumina sub-chloride reactions with the quartz reactor.

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INORGANIC GROWTH OF GaAs AND GaAlAs

An in-situ alumina coating in a quartz reactor will suppress silicon transport and alumina sub-chloride reactions with the quartz reactor.

A primary contaminate in high purity GaAs grown by either the AsCl3 or HCl growth techniques is silicon. This silicon is transported from the hot quartz walls of the reactor into the growing GaAs layer through the formation of chloro- silanes. The interaction of the chemicals employed in the growth of the films with the quartz reactor walls has also prevented the extension of inorganic growth techniques to the growth of AlxGa1-xAs. Aluminum sub-chlorides formed at high temperatures which could be used to transport aluminum during growth are known to react with the quartz walls of the reactor.

An in-situ alumina coating to the inside of a quartz reactor, deposited prior to growth will combine the benefits of both materials: silica and alumina. The coating is provided by the injection of an aluminum alkyl or organo-aluminum compound (Al(CH3)3, Al(C2H5)3, etc.) into the growth system. The growth system would be at a temperature high enough to pyrolize the compound which is about 600oC. The pyrolysis would provide a uniform coating of aluminum on the interior of the reactor. The aluminum could then react with the residual oxidants in the system which as background H2O or O2 providing for the gettering of oxygen during growth.

In an alternate approach, the aluminum bearing compound could pyrolize...