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Platinum Arsenide Resistor Fabrication

IP.com Disclosure Number: IPCOM000035701D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Camp, WO: AUTHOR [+2]

Abstract

Low ohmic contact to platinum arsenide resistors is achieved by additional deposition of titanium, platinum and gold at contact areas and stable resistance values are obtained by close control of platinum thickness and heat treatment.

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Platinum Arsenide Resistor Fabrication

Low ohmic contact to platinum arsenide resistors is achieved by additional deposition of titanium, platinum and gold at contact areas and stable resistance values are obtained by close control of platinum thickness and heat treatment.

In the fabrication of platinum resistors, platinum is deposited on a gallium arsenide substrate in an appropriate pattern and raised briefly to above 500oC. This treatment converts the deposition to platinum arsenide, a weak conductor. Ohmic contact to the resistor is facilitated by further depositing 600 Ao of titanium, 200 Ao of platinum and 800 Ao of gold on the resistor contact areas prior to heat treatment.

Stable resistance values over wide temperature changes are obtained by accurate deposition of the resistor platinum to a thickness of 160 Ao and heat treating the resistors in a flash alloy furnace for 60 seconds at 525oC. This process results in a layer of platinum on the platinum arsenide whose individual thicknesses are determined by that of the initial deposition and its heat treatment. The aggregate temperature coefficient of the resistor is the sum of the coefficient for platinum and the coefficient for the platinum arsenide with rising temperature.

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