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Browse Prior Art Database

Selectively Doped Complementary Transistor Heterostructure

IP.com Disclosure Number: IPCOM000035733D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 48K

Publishing Venue

IBM

Related People

Heiblum, M: AUTHOR [+2]

Abstract

The fabrication of complementary transistor structures having a p and an n channel device connected with one as the load for the other may be improved by overcoming the difference in mobilities of electrons and holes at different temperatures through the use of electron and hole gases in one composite structure.

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Selectively Doped Complementary Transistor Heterostructure

The fabrication of complementary transistor structures having a p and an n channel device connected with one as the load for the other may be improved by overcoming the difference in mobilities of electrons and holes at different temperatures through the use of electron and hole gases in one composite structure.

The energy band configuration of one structure is shown in Fig. 1, wherein there is an inverted selectively doped p-type structure (intrinsic-selectively doped-P) and over it, between the structure and the air/metal interface surface, a normal selectively doped structure (n-selectively doped-n). In Fig. 1 the materials AlGaAs and GaAs are used with the p+ doped AlGaAs being doped with Be and the n+ doped AlGaAs being doped with Si. Between the two AlGaAs layers, the undoped GaAs forms a pair of potential wells each of which simultaneously contains a two-dimensional carrier gas; one of which is a hole gas while the other is an electron gas.

For a potential well N 400 Ao the carrier densities in both types of carrier gases must be N 1012cm-2 to overcome the built-in electric field due to the p-n junction which forms between the two gases.

The two electron gases are completely separated from surface and substrate effects. The total current is a sum of the e- and e+ currents when contacts such as with In are made to both gases. If AuGeNi or Au is employed for the contacts, only the e- gas is contacted...