Browse Prior Art Database

Fuse Structure for Wide Fuse Materials Choice

IP.com Disclosure Number: IPCOM000035855D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Albaugh, KB: AUTHOR [+3]

Abstract

By terminating fuse material on a "corrosion stop" material, e.g., silicon, materials previously unusable due to atmospheric exposure and subsequent corrosion after fuse blowing are now used. This makes possible the use of upper level conductors for fuses with consequent larger insulation thickness between fuse and substrate. Therefore, more energy may be expended in blowing fuses without danger of making a connection to the substrate. A wider fuse blowing energy window or use of very high melting point materials for fuses are advantages of the structure.

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Fuse Structure for Wide Fuse Materials Choice

By terminating fuse material on a "corrosion stop" material, e.g., silicon, materials previously unusable due to atmospheric exposure and subsequent corrosion after fuse blowing are now used. This makes possible the use of upper level conductors for fuses with consequent larger insulation thickness between fuse and substrate. Therefore, more energy may be expended in blowing fuses without danger of making a connection to the substrate. A wider fuse blowing energy window or use of very high melting point materials for fuses are advantages of the structure.

Fig. 1 is a plan view showing only a fuse and connection structure. A series of connecting pads to ground 2 and a series of connections 4 used for various chip connections are made at the process step wherein polysilicon gate conductors are made. At some later process step wherein conductive lines are made on an insulation layer and connected to a lower level conductor, e.g., the polysilicon gate lines, fuses 6 are made and connected to polysilicon pads 2 and connections 4. Region 8 is an area blown out by a laser used to open fuses.

A cross section of Fig. 1 at AA showing all layers is Fig. 2. The polysilicon 2 and 4 is insulated from substrate 12 by an insulating layer 10, e.g., recessed oxide (ROX). In this case, the conductor of choice for the first metal level in the integrated circuit is used as the fuse material 6 which is connected to pads 2 and connectors 4...