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Use of Plasma Modification to Increase Polymer Adhesion to Oxygen Etch Barriers

IP.com Disclosure Number: IPCOM000035956D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 14K

Publishing Venue

IBM

Related People

Anderson, HR: AUTHOR [+5]

Abstract

In thin film redistribution (TFR) and similar operations polymer adhesion to oxygen etch barriers is poor. An annealing process has been invented which increases polyimide (PI) T-O adhesion by 500% as compared to PMDA-ODA (pyromalidic dianhydride-octyldecyl amine) adhesion to the virgin hexamethyldisilazane [HMDS(N)] surface. The development involves annealing the HMDS(N) film at 400oC/2 hrs. in air and treating that surface with argon (Ar) and ammonia (NH3) plasmas using a molybdenum (Mo) plate-covered cathode.

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Use of Plasma Modification to Increase Polymer Adhesion to Oxygen Etch Barriers

In thin film redistribution (TFR) and similar operations polymer adhesion to oxygen etch barriers is poor. An annealing process has been invented which increases polyimide (PI) T-O adhesion by 500% as compared to PMDA-ODA (pyromalidic dianhydride-octyldecyl amine) adhesion to the virgin hexamethyldisilazane [HMDS(N)] surface. The development involves annealing the HMDS(N) film at 400oC/2 hrs. in air and treating that surface with argon (Ar) and ammonia (NH3) plasmas using a molybdenum (Mo) plate-covered cathode.

The polymer can be any used as an electrical insulator in the semiconductor industry, such as PMDA-ODA, BTDA-MDA (benzophenone tetracarboxylic dianhydride), etc. The barrier may be either a plasma enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) or plasma polymerized organosilicone film. This latter can be divinylsiloxane, HMDS(N), hexamethyldisiloxane or any other organosilicone compound volatile enough for plasma polymerization.

In the experimental work, ESCA (electron spectroscopy for chemical analysis) analyses of the HMDS(N) surfaces were done after deposition, after anneal at 400oC/2 hrs. in air and after plasma treatments. Table I displays the results of HMDS(N) virgin, after anneal, and after plasma treatments with adhesion analysis results using the peel technique. Peel values were measured after fully curing the polyimide coating (T-O peel) and after 10 cycles at 100oC-360oC-400oC in N2 (T-10 peel).

Table 1. ESCA and Peel Results of HMDS(N) Samples Sample # C% O% N% Si% Mo T-O Peel T-10 Peel (g/mm) (g/mm)

1 23 53 6 18 D 31 27

2 23 52 8 16 D 44 37

3 20 53 10 18 D 38 59(!)

4 16 57 8 19 D 43 55(!)

5 29 48 5 18 D 25 28

6 23 49 11 17 D 26 31

Control 21 55 1 23 NA 1 25(!) Virgin 54 7 14 25 NA 7-9 -- C = carbon; O = oxygen; N = nitrogen; Si = silicon; Mo =

molybdenum; D = determined.

The results indicate the nitrogen concentration on the sample surfaces increased up to 10 fold. There is up to a 40 fold increase in adhesion when comparing T-0 peel...