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Sloping Vias Using Deep Uv-Hardened Resist

IP.com Disclosure Number: IPCOM000036106D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Theisen, J: AUTHOR [+2]

Abstract

A process sequence is disclosed which produces positively sloped vias (45-75 degrees) in resist without thermal resist reflow. The process steps are as follows: 1. Deposit a blanket layer of resist 10 on substrate 11 and deep UV harden (Fig. 1). (Image Omitted) 2. Deposit a second layer of resist 12 over the layer 10 (Fig. 2). 3. Lithographically define a pattern of contacts 13 in resist 12. 4.Transfer contacts 13 into the UV-hardened resist 10 using a low pressure (10-50 mtorr) O2 Reactive Ion Etch (RIE). Fig. 3 shows what image 13 would look like after 50% of the RIE image transfer is complete. The sloped top edges 15 of the resist 12 is due to the sputtering characteristic of the low pressure O2 RIE.

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Sloping Vias Using Deep Uv-Hardened Resist

A process sequence is disclosed which produces positively sloped vias (45- 75 degrees) in resist without thermal resist reflow. The process steps are as follows: 1. Deposit a blanket layer of resist 10 on substrate 11 and deep UV harden (Fig. 1).

(Image Omitted)

2. Deposit a second layer of resist 12 over the layer 10 (Fig. 2). 3. Lithographically define a pattern of contacts 13 in resist 12. 4.Transfer contacts 13 into the UV-hardened resist 10 using a low pressure (10-50 mtorr) O2 Reactive Ion Etch (RIE). Fig. 3 shows what image 13 would look like after 50% of the RIE image transfer is complete. The sloped top edges 15 of the resist 12 is due to the sputtering characteristic of the low pressure O2 RIE. By changing the RIE conditions, the degree of sputtering can be tailored to produce any desired slope while maintaining a critical dimension 14. Fig. 4 shows the completed transfer of image 12 into the UV-hardened resist 10.

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