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Thin Film Hall Sensor for Magnetic Recording

IP.com Disclosure Number: IPCOM000036281D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 2 page(s) / 80K

Publishing Venue

IBM

Related People

Nix, JL: AUTHOR [+3]

Abstract

A magnetic recording sensor utilizing the Hall effect is described. This design is advantageous because the deposition of the Hall thin film onto the sloping walls of a "V"-shaped hole in the substrate allows a small gap length at the head-medium interface while at the same time allowing a greater average film thickness. For high density recording applications one requires narrow gap lengths while for high carrier mobilities necessary to achieve adequate signal levels one requires thicker Hall films. A second advantage for this device is the minimization of the amount of deposited metal films exposed to the recording medium. Since there are no glue lines present, the device (Image Omitted) is long lasting even when used with abrasive magnetic recording tape.

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Thin Film Hall Sensor for Magnetic Recording

A magnetic recording sensor utilizing the Hall effect is described. This design is advantageous because the deposition of the Hall thin film onto the sloping walls of a "V"-shaped hole in the substrate allows a small gap length at the head-medium interface while at the same time allowing a greater average film thickness. For high density recording applications one requires narrow gap lengths while for high carrier mobilities necessary to achieve adequate signal levels one requires thicker Hall films. A second advantage for this device is the minimization of the amount of deposited metal films exposed to the recording medium. Since there are no glue lines present, the device

(Image Omitted)

is long lasting even when used with abrasive magnetic recording tape.

The device is constructed of a substrate such as single crystal sapphire or manganese zinc ferrite having good wear characteristics when used with an abrasive recording medium. Using standard, anisotropic etch techniques, a "V" hole is etched into the substrate (Fig. 1). Next, a suitable metallic or semiconductor film with high carrier mobility is vacuum-deposited into the hole and patterned. The final deposition is that of contact metal leads onto the previous film (Fig. 2). Lastly, the device is lapped from the "bottom" so that the proper magnetic gap length is achieved.

When the substrate is of a magnetic material (e.g. MnZn ferrite), the substrate walls of the...