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Plasma Deposition of Organosilicon Films Onto an Rf-Powered Electrode Reactive Ion Deposition

IP.com Disclosure Number: IPCOM000036322D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-28
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Ferreiro, LM: AUTHOR [+4]

Abstract

Disclosed is a process by which thin films of hexamethyldisilazane may be deposited onto substrates placed on the RF-powered electrode of a parallel plate plasma system (Reactive Ion Deposition (RID) mode). Using this technique, films have been deposited with thickness ranging from 0.1 micron to several microns, at deposition rates as high as 2,700 Angstroms/minute. These rates are at least an order of magnitude greater than existing processes which utilize the Plasma Deposition mode (deposition onto the grounded electrode of an RF plasma system).

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Plasma Deposition of Organosilicon Films Onto an Rf-Powered Electrode Reactive Ion Deposition

Disclosed is a process by which thin films of hexamethyldisilazane may be deposited onto substrates placed on the RF-powered electrode of a parallel plate plasma system (Reactive Ion Deposition (RID) mode). Using this technique, films have been deposited with thickness ranging from 0.1 micron to several microns, at deposition rates as high as 2,700 Angstroms/minute. These rates are at least an order of magnitude greater than existing processes which utilize the Plasma Deposition mode (deposition onto the grounded electrode of an RF plasma system).

In addition to increasing throughput of deposition systems, this technique will decrease the frequency with which these tools require cleaning. Deposition processes, such as this inherently result in deposition upon chamber walls, as well as all other exposed surfaces in the system. If the deposited material is allowed to build up to an excessive level, it will flake off and result in contamination problems. Plasma-depositing materials onto grounded electrodes results in approximately equal deposition rates on the grounded walls of the reactor, and the material build-up on the walls is equal to the cumulative thickness of the deposited films. Using the RID technique results in much faster deposition onto the substrate than onto the system walls. Thus, many more parts can pass through a system before the cumulative deposition on...