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Method of Producing Defined Edge Profiles in Photoresist by Electron Beam Proximity Printing Lithography

IP.com Disclosure Number: IPCOM000036392D
Original Publication Date: 1989-Sep-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Bartha, J: AUTHOR [+4]

Abstract

Owing to its characteristic fine correction mode, electron-beam proximity printing (EBP) lithography permits the production of defined photoresist edge profiles by a number of staggered single scans.

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Method of Producing Defined Edge Profiles in Photoresist by Electron Beam Proximity Printing Lithography

Owing to its characteristic fine correction mode, electron-beam proximity printing (EBP) lithography permits the production of defined photoresist edge profiles by a number of staggered single scans.

The production of semiconductor devices in present technology and of future I2L circuits makes maximum demands on lithography, process technology and their combination. Some coating processes require highly defined photoresist profiles, as deviations may lead to enormous yield losses during the production process. Frequently, resist reflow processes fail to produce the desired photoresist profiles.

By means of EBP lithography, resist profiles as are required for different process technologies may be produced as early as in the lithographic step. The basis of the described method is the "step and intelligent scan" exposure mode of the EBP which cannot be realized in optical or X-ray lithography. In EBP lithography, a 1x membrane mask is exposed by shadow casting on the wafer, with projection not being effected by floodlight but by raster scanning using a parallel electron beam of about 1 mm diameter. Fine correction coils permit adjusting the beam inclinations to compensate for table errors or mask distortions.

By suitably selecting the power and scanning conditions, full chip exposure may be carried out in a number of successive single scans rather than in one ras...