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Soft Vacuum Pulsed Electron Beam Processing of TEFLON Films

IP.com Disclosure Number: IPCOM000036466D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 51K

Publishing Venue

IBM

Related People

Collins, GJ: AUTHOR [+3]

Abstract

Poly(tetrafluoroethylene), TEFLON*, is an excellent engineering material with a low dielectric constant, chemical inertness in hazardous environments, and thermal stability. However, it has many shortcomings such as poor adhesion to substrates, difficulty in micron-sized via hole fabrication, almost zero solubility in common solvents, and others. There are ways to improve its poor adhesion by treating TEFLON films with certain chemicals, or by simultaneous deposition of metal substrates while exposing TEFLON surfaces to argon ions. Thin NAFION* film with TEFLON backbones may be used as an intermediate layer. For microcircuit engineering purposes, a technique for micron-sized image fabrication is still required.

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Soft Vacuum Pulsed Electron Beam Processing of TEFLON Films

Poly(tetrafluoroethylene), TEFLON*, is an excellent engineering material with a low dielectric constant, chemical inertness in hazardous environments, and thermal stability. However, it has many shortcomings such as poor adhesion to substrates, difficulty in micron-sized via hole fabrication, almost zero solubility in common solvents, and others. There are ways to improve its poor adhesion by treating TEFLON films with certain chemicals, or by simultaneous deposition of metal substrates while exposing TEFLON surfaces to argon ions. Thin NAFION* film with TEFLON backbones may be used as an intermediate layer. For microcircuit engineering purposes, a technique for micron-sized image fabrication is still required. We have found electron beam exposures of TEFLON films cause self-developing images in a micron-size in a very efficient way. The electron beam exposures were carried out in a proximity mode using a stencil mask with 25 KeV pulsed electron beams in soft vacuum. Electrons are extracted from plasma generated by pulsed discharge, accelerated and impinged upon the films in a residual pressure of 50-100 millitorr. The equipment used has already been reported. A self developing rate of 0.05 mm/100 pulses has been obtained with an electron dose of 10-5C/cm2 per pulse. A pulse duration time was 500 nsec/pulse. Electron beam inhomogeneity precluded relating exact etch rate to dose. However, its estimated et...