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Browse Prior Art Database

Bipolar Complementary Circuit Improvement

IP.com Disclosure Number: IPCOM000036559D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Tang, DD: AUTHOR

Abstract

A technique is described whereby a temperature-induced current runaway, in bipolar complementary circuits, is controlled through the use of a direct current source.

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Bipolar Complementary Circuit Improvement

A technique is described whereby a temperature-induced current runaway, in bipolar complementary circuits, is controlled through the use of a direct current source.

Bipolar complementary circuits [*], using stacks of PNP and NPN transistors, as shown in Fig. 1, suffer from temperature-induced current runaway, whereby the gate current increases exponentially with temperature. The concept described herein implements an improvement to bipolar complementary circuits so that the gate current will be insensitive to increases in temperature.

The improvement is shown in Fig. 2. First, a current source is applied at the VEE, as shown in Fig. 2a, or second, a current source is applied at VCC, as shown in Fig. 2b. A typical example of the application of the improvement at VEE, is shown in Fig. 2c.

The current source incorporates a large resistor to fix the current value of the gate. A capacitor is placed in parallel to the current source to provide fast switching.

In actual operation, in the DC mode, the current of the gate will be insensitive to temperature. In the AC mode, a large transient current can be obtained through the capacitor for fast switching.

Reference: S. K. Wiedmann and H. H. Berger, et al. Proc . 1st . Europ. Solid State Circuit Conf. Digest of Papers, pp. 36-39 (1975).

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