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Pulsed Electroplating of Superconducting Films From Non-Aqueous Solutions

IP.com Disclosure Number: IPCOM000036697D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Bindra, P: AUTHOR [+3]

Abstract

This disclosure describes the concept of electrochemical deposition of superconducting films with the nominal stoichiometry YBa2 Cu3 O(9-d) (d=2.1). There are sufficient adjustable parameters such that the composition of the deposit may be varied over a relatively broad range. The basic idea involves the pulsed current or potential deposition of the metals from an aprotic solvent containing prerequisite quantities of the metal salts or metal complexes. The metals are deposited under anaerobic conditions to produce a thin film of the metals with the proper stoichiometry. The film is then allowed to come in contact with oxygen, under carefully controlled conditions, to achieve the oxide structure *.

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Pulsed Electroplating of Superconducting Films From Non-Aqueous Solutions

This disclosure describes the concept of electrochemical deposition of superconducting films with the nominal stoichiometry YBa2 Cu3 O(9-d) (d=2.1). There are sufficient adjustable parameters such that the composition of the deposit may be varied over a relatively broad range. The basic idea involves the pulsed current or potential deposition of the metals from an aprotic solvent containing prerequisite quantities of the metal salts or metal complexes. The metals are deposited under anaerobic conditions to produce a thin film of the metals with the proper stoichiometry. The film is then allowed to come in contact with oxygen, under carefully controlled conditions, to achieve the oxide structure
*.

Schematic current/voltage curves for reduction processes are shown in Fig. 1A. It is evident that Ba and Y are considerably more difficult to reduce than Cu. Therefore, if a constant current/poten tial deposition were to be carried out at a potential in the kinetic region for Ba (E4), then Cu deposition would be under constant mass transfer control and the resultant deposit would have poor metallurgy. It is, therefore, advantageous to carry out the deposition under pulsed conditions (Fig. 1B). The potential may be stepped from a region E1, where no deposition occurs, to potential E2, where only deposition occurs, to potential E4, where all three metals are being reduced. The stoichiometry of the d...