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Simplified Transferable Metallurgy Pattern With High Density Capability

IP.com Disclosure Number: IPCOM000036712D
Original Publication Date: 1989-Oct-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Berasi, PH: AUTHOR [+4]

Abstract

This article describes a means for accurately transferring very dense circuit-geometry substrates without the use of a release layer or agent.

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Simplified Transferable Metallurgy Pattern With High Density Capability

This article describes a means for accurately transferring very dense circuit- geometry substrates without the use of a release layer or agent.

The disclosed process permits the generation of fine circuit lines and tight spaces. The circuit pattern is defined additively by conventional means on a metal carrier such as molybdenum. The pattern can be released from the carrier at the time of transfer without the need of a polymer release agent between it and the carrier.

Conventional photoprocesses are used to define the resist image 1 on a thin molybendum sheet 2, as shown in Fig. 1. Metallization (plating, evaporation or sputtering) follows to obtain the conductive image 3 shown in Fig. 2. The photopolymer (resist) 1 is next stripped so as to not contaminate the substrate surface intended for the decal transfer, leaving the metal image 3 on the carrier 2, as shown in Fig. 3. The metallic conductor image(s) 3 is then transferred to the substrate 4, as shown in Fig. 4. Due to the weak adhesion forces between the metal conductor (Ni, Cu, etc.) and molybdenum, release of the metal conductor circuit pattern 3 from the molybdenum carrier 2 is completely effective.

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