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Dry Etch Technique for Delineation of Metallic Films Bounded by Passivation Layers Including a Metal Penetration Examination Method

IP.com Disclosure Number: IPCOM000036866D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 66K

Publishing Venue

IBM

Related People

Trudeau, FG: AUTHOR [+2]

Abstract

It is proposed to substitute a dry etch technique in place of the wet etch technique used for delineation of metallic films bounded by oxide/ nitride passivation layers in semiconductor devices. A quick precise method is also suggested for physically examining for metal penetration.

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Dry Etch Technique for Delineation of Metallic Films Bounded by Passivation Layers Including a Metal Penetration Examination Method

It is proposed to substitute a dry etch technique in place of the wet etch technique used for delineation of metallic films bounded by oxide/ nitride passivation layers in semiconductor devices. A quick precise method is also suggested for physically examining for metal penetration.

Conventional wet etch techniques may be used to delineate metallic films if they are bounded by oxide passivation layers. However, if the metallic film is bounded on any of its surfaces by an SixNy film, that boundary will be masked and not delineated. A wet etch capable of etching the nitride would also etch the metallic film and be unsatisfactory.

It is proposed to use a gaseous mixture, such as CF4 and O2, with a high selectivity between metallic films and passivation films (oxide/nitride) to delineate the metallic films. The specific mixture

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will not etch Cr, A1, Cu and most other metals used in product interconnections. It does etch oxides, nitrides and other silicon-based compounds.

The foregoing technique performs well as a failure analysis toaol in highlighting/delineation of metallic process artifacts which reduce product yields and increase reliability exposures.

A related part of this proposal is a quicker, more precise method for physically examining products for metal penetration than used heretofore. Once a defective device(s...