Browse Prior Art Database

Deco Etch Process for Determining the Etch Effect on Thin Films in Small Holes

IP.com Disclosure Number: IPCOM000037150D
Original Publication Date: 1989-Nov-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Koblinger, O: AUTHOR [+2]

Abstract

Prior-art processes do not allow determining the etch effect on, e.g., the amount of titanium silicide removed from contact holes of about 1 mm diameter by etching. By means of the RIE (reactive ion etch) deco process described in this article, the amount of material removed can be readily determined at high speed.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 61% of the total text.

Page 1 of 2

Deco Etch Process for Determining the Etch Effect on Thin Films in Small Holes

Prior-art processes do not allow determining the etch effect on, e.g., the amount of titanium silicide removed from contact holes of about 1 mm diameter by etching. By means of the RIE (reactive ion etch) deco process described in this article, the amount of material removed can be readily determined at high speed.

Layer thicknesses can normally be readily determined by suitable measuring processes. However, any of these processes necessitate minimum size measuring points. For removing titanium silicide from contact holes of about 1 mm diameter, there are only two processes which are both highly time- consuming.

For the 1st process, microcrographs are produced by a transmission electron microscope (TEM). For the 2nd process, such micrographs are produced by a secondary electron microscope (SEM), for which purpose the sample to be tested is broken. The broken edge is viewed by SEM, and the individual layer thicknesses are measured. The disadvantage of this process is that at a particular layer structure, no contrast is produced in SEM, so that the test sample has to be wet etched with hydrofluoric acid. As the wet etch process is isotropic, it is impossible to determine the etch effect on the titanium silicide layer in the contact hole produced by RIE. In addition, the titanium silicide is removed from the entire contact hole, as the etch rate of the thin titanium silicide layer in hydr...