Browse Prior Art Database

Multiple Target Configuration for Ion Beam Deposition

IP.com Disclosure Number: IPCOM000037389D
Original Publication Date: 1989-Dec-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Kim, J: AUTHOR [+2]

Abstract

Disclosed is a device to accommodate a larger number of sputtering targets and to access any combinations of these targets in an ion beam system.

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Multiple Target Configuration for Ion Beam Deposition

Disclosed is a device to accommodate a larger number of sputtering targets and to access any combinations of these targets in an ion beam system.

The configuration includes three parts: 1) a stationary ion source, 2) array of target tiles attached to two linear motion bars location at opposite sides in a vacuum chamber, and 3) an optional rotating substrate holder for better film thickness and alloy composition uniformity.

Fig. 1 illustrated the location of targets with respect to the ion source and substrate. Sputtering targets are mounted on each of long travel linear feed- through (magnetically coupled feed through). The two arms are fed from opposite sides of the vacuum chamber maintaining a small gap between two layers of targets. A single target or two targets can be positioned under the ion source by linear motion of the two arms. From this arrangement, it is possible to obtain any combination of thin film compounds by overlapping any two or more targets exposed to the ion beam flux.

Since the ion beam is a collimated ray of ions from the ion source, the area exposed to the beam is sharply defined on the target surface; therefore, only the target area exposed to the beam will be sputtered. From Fig. 2, when the ion beam flux hits two targets, A and B, the composition of sputtered material is determined by sputter yield of materials, Y(A) and Y(B), and the area exposed to the ion flux, S(A) and S(B). Spu...