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Reducing Contamination in Plasma Enhanced Chemical Vapor Deposition (PECVD) Systems

IP.com Disclosure Number: IPCOM000037445D
Original Publication Date: 1989-Jan-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Delage, SL: AUTHOR [+4]

Abstract

A technique is described whereby contamination and cleaning in plasma enhanced chemical vapor deposition (PECVD) systems are reduced through the use of silicon compounds.

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Reducing Contamination in Plasma Enhanced Chemical Vapor Deposition (PECVD) Systems

A technique is described whereby contamination and cleaning in plasma enhanced chemical vapor deposition (PECVD) systems are reduced through the use of silicon compounds.

The concept utilizes electrodes and shielding components made of silicon, within the PECVD process, so as to eliminate time consuming and hazardous cleaning processes. The improvement is particularly applicable in the fabrication of devices, such as amorphous silicon solar cells and thin film transistors (TFT's).

In PECVD systems, the metallic electrodes are considered the primary source of metallic impurities that alter the properties of deposition films. The differences in thermal expansion coefficients and intrinsic stress of the films lead to the delamination of the built-up material and its flaking. Tiny dust particles generated in the system are responsible for the creation of defects. This phenomena, typically occurs after the build-up of only a few microns of the deposited material. Naturally, this affects the performance of the devices and reduces manufacturing yields.

Traditional solutions to avoid the contamination have been the periodic cleaning of all the parts, where deposition occurs, such as substrate holders, electrodes and shielding members. This was achieved either by wet or dry etching, followed by a wet chemical cleaning. The process was expensive, time consuming and hazardous, since hot basi...