Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Differentiation Technique for Extraction of Thin-Film Dielectric Breakdown Voltage

IP.com Disclosure Number: IPCOM000037551D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Anderson, RD: AUTHOR [+2]

Abstract

This article describes a fast, reliable and simple technique for measuring dielectric breakdown voltage.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 80% of the total text.

Page 1 of 1

Differentiation Technique for Extraction of Thin-Film Dielectric Breakdown Voltage

This article describes a fast, reliable and simple technique for measuring dielectric breakdown voltage.

The thin-film dielectric breakdown voltage in VLSI circuitry is commonly computed using the ramp stress method. This method requires that a ramp voltage be applied across a thin-film dielectric and a series resistor. Voltage is monitored across the resistor. The increasing voltage will eventually hit the breakdown point for the dielectric. At this voltage, current flows through the dielectric and the series resistor. In theory, the voltage across the resistor should be zero until the breakdown point is reached. The breakdown voltage is then found by multiplying the time to breakdown by the slope of the ramp voltage.

All thin-film dielectrics actually exhibit a gradual increase in leakage current known as Fowler-Nordheim tunneling current. The method commonly used to compensate for this current requires generating an ideal Fowler-Nordheim tunneling curve for the film being tested and comparing this to the slope change of the waveform that appears across the resistor. This method is accurate but requires time to visually approximate the intercept of two curves.

The new method proposed in this article saves time. A ramp voltage is placed across a thin-film dielectric and voltage is monitored across a series resistor by a digital storage oscilloscope. After breakdown is reached, the...