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Tungsten-Glass Bonding Process

IP.com Disclosure Number: IPCOM000037576D
Original Publication Date: 1989-Mar-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Lane, R: AUTHOR

Abstract

Improved bonding and heat transfer between tungsten and its glass substrate is achieved by depositing a strongly adhering oxide onto a tungsten film and uniting the coated tungsten to the glass with heat in an electric field.

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Tungsten-Glass Bonding Process

Improved bonding and heat transfer between tungsten and its glass substrate is achieved by depositing a strongly adhering oxide onto a tungsten film and uniting the coated tungsten to the glass with heat in an electric field.

Tungsten sheet is first coated on a surface with a thin film having a strongly bonded oxide, such as silicon, hafnium or aluminum, to a thickness of approximately 500Ao . The sheet is then placed on the glass substrate with the film adjacent to the glass and the two pieces heated to approximately 300oC while a field of approximately 300 VDC is maintained across the juncture. The glass should have a coefficient of expansion close to that of the tungsten. The heat and electric field are maintained until the surface of the glass melts to a depth of one micron. This grows an oxide on the film that reacts with the glass, making a normal, oxide-glass bond.

The tungsten can be patterned by subsequent etching. One sequence is to deposit a copper film on the tungsten as a mask, form the copper mask pattern via lithography and wet etching, and use reactive ion etching to form the tungsten.

Disclosed anonymously.

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