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Quartz Sputter System Brass Electrode

IP.com Disclosure Number: IPCOM000037615D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Lupul, FT: AUTHOR [+3]

Abstract

Some commercial quartz sputter systems in production have copper anodes and cathodes for electrodes. The electrodes may deviate from a flatness specification after many cycles of operation. This condition of poor point-to-point contact between the anode and anode plate induces temperature and uniformity of glass coverage problems.

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Quartz Sputter System Brass Electrode

Some commercial quartz sputter systems in production have copper anodes and cathodes for electrodes. The electrodes may deviate from a flatness specification after many cycles of operation. This condition of poor point-to-point contact between the anode and anode plate induces temperature and uniformity of glass coverage problems.

The oxidation of the copper generates extensive cleanup before bonding a target to the cathode electrode. Poorly bonded targets result in premature changes, as well as uniformity problems. Additionally, the cost of the electrode increases from the difficulty in machining the copper.

A brass electrode (approx. composition 60% Cu, 40% Zn, 0% Pb) can be fabricated to a much tighter flatness specification. The brass electrode in conjunction with a one-sided flame polished anode plate improves the uniformity of glass coverage both within the wafer and across the batch. The flame polished surface contacts the brass anode electrode. Wafer temperature decreases from "black" coating the brass anode (metal penetration). Further reductions occur by controlling the electrode temperature with a refrigerated recirculator.

The brass cathode electrode decreases the cycle time of target bonding by eliminating the cleaning of oxidized copper. Additional benefits include decreased unplanned maintenance, higher manufacturing availability, longer tooling life and compatibility with existing target bonding processes.

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