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Low Temperature Insulator Growth Via Precursor Phase Reactions

IP.com Disclosure Number: IPCOM000037626D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Martinez-Duart, J: AUTHOR [+3]

Abstract

Insulators, such as silicon nitride, dioxide or oxynitride, having good electrical characteristics can be produced by first growing a precursor film in a chamber at low pressure, a low substrate temperature and a low ratio of ammonia to silane and then annealing and converting the film in an appropriate atmosphere.

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Low Temperature Insulator Growth Via Precursor Phase Reactions

Insulators, such as silicon nitride, dioxide or oxynitride, having good electrical characteristics can be produced by first growing a precursor film in a chamber at low pressure, a low substrate temperature and a low ratio of ammonia to silane and then annealing and converting the film in an appropriate atmosphere.

An unstable reactive precursor film, is grown on a silicon substrate by chemical vapor deposition using a chamber in which total pressure is 6 to 10 Torr, the substrate temperature is 95oC to 250oC, with the gas temperature at 500oC to 550oC and an ammonia-silane ratio less than 10:1. These conditions produce a film of composition SixNyHz with x/y greater than 2 and z = 0.1-1. The film gives the appearance of a polymeric, hydrogenated, amorphous silicon- silicon nitride reactive alloy. The polymer is then readily converted into silicon nitride, oxide or oxynitride by annealing in, respectively, ammonia, oxygen or their mixtures at relatively low temperatures. The precursor film is open and porous, making it easy to nitride or oxidize, and the interface trap and fixed charge densities are in order of magnitude lower than those experienced in converting pure silicon.

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