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Vacuum Deposition Process for High Transition Temperature Oxide Superconductors

IP.com Disclosure Number: IPCOM000037633D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Kleinsasser, AW: AUTHOR [+4]

Abstract

Many oxide materials have been shown to exhibit superconductivity at high temperatures (e.g., YBa2Cu3O7). The properties of these materials are very sensitive to oxygen content (e.g., oxygen vacancies). Thin films are very important for electronic device and other applications. Conventional film deposition methods can be used to produce films of these materials, but only with difficulty. Some problems include: (1) a high oxygen pressure is needed even if oxide source material is used (this causes problems with negative ion formation in sputtering, and reaction with source material, filaments, etc. as well as scattering of evaporant in the gas phase in evaporation processes), (2) high temperature (>900oC) anneals in oxygen are required to form the desired compounds.

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Vacuum Deposition Process for High Transition Temperature Oxide Superconductors

Many oxide materials have been shown to exhibit superconductivity at high temperatures (e.g., YBa2Cu3O7). The properties of these materials are very sensitive to oxygen content (e.g., oxygen vacancies). Thin films are very important for electronic device and other applications. Conventional film deposition methods can be used to produce films of these materials, but only with difficulty. Some problems include: (1) a high oxygen pressure is needed even if oxide source material is used (this causes problems with negative ion formation in sputtering, and reaction with source material, filaments, etc. as well as scattering of evaporant in the gas phase in evaporation processes), (2) high temperature (>900oC) anneals in oxygen are required to form the desired compounds. Also, it is important to develop processes which allow film formation at relatively low temperatures (well below 900oC).

A method is described for adding oxygen to a depositing film in reactive form at low system pressures (or at least low oxygen partial pressure). The metal constituents are evaporated (or sputtered) from elemental or compound sources by any of a number of well-known techniques. Examples include sputtering from a single target of the desired compound, evaporation and/or sputtering from elemental sources, and evaporation and/or sputtering from compounds such as oxides or carbonates. In each case, the condens...