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Enhanced Ion Implantation of Low Vapor Pressure Impurities

IP.com Disclosure Number: IPCOM000037640D
Original Publication Date: 1989-Apr-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Hovel, HJ: AUTHOR [+3]

Abstract

A single halide source can be used to convert several low vapor pressure impurities into their volatile halides and enhance respective beam currents. This is especially beneficial for refractory metals having high boiling points and volatile fluorides.

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Enhanced Ion Implantation of Low Vapor Pressure Impurities

A single halide source can be used to convert several low vapor pressure impurities into their volatile halides and enhance respective beam currents. This is especially beneficial for refractory metals having high boiling points and volatile fluorides.

By passing silicon tetrafluoride over gallium arsenide as a source material, an increase of an order of magnitude is experienced in the gallium ion beam current. Further increase is achieved by prior oven heating of the source material. A single source material passed over a plurality of impurities, such as gallium, indium or aluminum, increases their individual beam currents. For example, the gallium arsenide/silicon tetrafluoride combination provides positive gallium, arsenic, silicon and fluorine implantation ions concurrently. In a silicon/boron fluoride combination, a silicon ion beam is used for pre- amorphization of a silicon substrate and a boron ion beam is used for p-doping. Reactive boron fluoride or silicon tetrafluoride gases can be passed over solid sources to produce germanium, bismuth, silicon, aluminum or indium ions.

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