Browse Prior Art Database

Multilevel Resist Process using Sputtered Quartz as Interlayer

IP.com Disclosure Number: IPCOM000037705D
Original Publication Date: 1989-May-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Gut, GM: AUTHOR [+2]

Abstract

The Multilayer Resist (MLR) technique is used in the fabrication of very high resolution images on semiconductor chips. A specific feature of the MLR technique is the choice of the interlayer material. The purpose of the interlayer material is to provide a barrier to oxygen reactive ion etching (RIE) of the bottom polymer layer. Refer to Fig. 1.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Multilevel Resist Process using Sputtered Quartz as Interlayer

The Multilayer Resist (MLR) technique is used in the fabrication of very high resolution images on semiconductor chips. A specific feature of the MLR technique is the choice of the interlayer material. The purpose of the interlayer material is to provide a barrier to oxygen reactive ion etching (RIE) of the bottom polymer layer. Refer to Fig. 1.

The MLR technique is improved if a thin layer of sputtered quartz is used as the interlayer material. The quartz is penetrated by CF4 in the RIE and is very effective as an etch barrier during O2 RIE of the bottom photoresist layer. The sputtered quartz is also clean and free of pinholes.

The sputtered quartz layer is an excellent alternative to other barrier materials used and permits a wider choice of bottom planarizing layers.

Disclosed anonymously.

1