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Browse Prior Art Database

Etch Suppressor for Electromagnetic Radiation Etching of Polymers

IP.com Disclosure Number: IPCOM000037770D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-30
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Donelon, JJ: AUTHOR

Abstract

Etch rate of a polymer, e.g. polyimide, by electromagnetic radiation, e.g. laser light, is suppressed by roughening the polymer surface. The incident radiation slowly etches through the roughened surface layer and then etches the bulk polymer at the etch rate for the unroughened polymer. The roughened surface is useful as a polymer etch stop.

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Etch Suppressor for Electromagnetic Radiation Etching of Polymers

Etch rate of a polymer, e.g. polyimide, by electromagnetic radiation, e.g. laser light, is suppressed by roughening the polymer surface. The incident radiation slowly etches through the roughened surface layer and then etches the bulk polymer at the etch rate for the unroughened polymer. The roughened surface is useful as a polymer etch stop.

An example of the use of this concept in microelectronics is as an etch stop for a polyimide layer. A first polyimide layer is deposited onto a substrate. The polyimide surface is roughened, for example by glass bead blasting. A second polyimide layer is deposited onto the roughened surface. The sample is irradiated with laser light, e.g. excimer laser, which etches through the second polyimide layer to the roughened surface of the first layer at which the etch rate is substantially reduced. Standard masking techniques are used to form an etch pattern in the second polyimide layer. The roughened surface layer etch stop permits a uniform etch depth to be achieved in the patterned second polyimide layer.

Disclosed anonymously.

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