Browse Prior Art Database

Gate Contacts of Mo/Ge for Gaas Devices

IP.com Disclosure Number: IPCOM000037772D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-29
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

LaTulipe, DC, Jr: AUTHOR [+5]

Abstract

Gate contacts of Mo/Ge on GaAs can be rendered less susceptible to peeling by cleaning the GaAs with concentrated ammonium hydroxide followed by dilute ammonium hydroxide with isopropyl alcohol rinse, and applying the contact metals in layers of 20Ao Ge and 500Ao Mo as shown in the figure.

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Gate Contacts of Mo/Ge for Gaas Devices

Gate contacts of Mo/Ge on GaAs can be rendered less susceptible to peeling by cleaning the GaAs with concentrated ammonium hydroxide followed by dilute ammonium hydroxide with isopropyl alcohol rinse, and applying the contact metals in layers of 20Ao Ge and 500Ao Mo as shown in the figure.

Disclosed anonymously.

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