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Epitaxial Metal/Insulator/Semiconductor Structure Using Casi2/Caf2/Si

IP.com Disclosure Number: IPCOM000037776D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-30
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Himpsel, FJ: AUTHOR [+3]

Abstract

A technique is described whereby the combination CaSi2/CaF2/Si is used as the metal contact for three dimensional epitaxial metal/ insulator/semiconductor (MIS) structures.

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Epitaxial Metal/Insulator/Semiconductor Structure Using Casi2/Caf2/Si

A technique is described whereby the combination CaSi2/CaF2/Si is used as the metal contact for three dimensional epitaxial metal/ insulator/semiconductor (MIS) structures.

Epitaxial MIS structures are an essential ingredient of three dimensional device integration. CaSi2/CaF2/Si structures which exhibit nearly lattice- matched structures in the (111) orientation are proposed for use as MIS structures which maintain the single crystal structure of the silicon substrate.

To date, no suitable epitaxial metal contact has been reported for CaF2/Si insulator/semiconductor combination. The materials which have been investigated, such as epitaxial NiSi2, CoSi2 and doped Si, do not grow well on CaF2 resulting from the presence of twin boundaries and chemical reactions with the CaF2 which drive out fluorine. CaSi2 does not have a cubic crystal structure like NiSi2, CoSi2 and Si which may help avoid twining.

The previously unexplored growth of epitaxial CaSi2 (111) has been demonstrated by low energy electron diffraction, transmission electron microscope and Rutherford backscattering. CaSi2 has a crystal structure in which Si (111) double layers alternate with Ca layers.

Disclosed anonymously.

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