Browse Prior Art Database

Selectively Grown Epitaxial Structure for Self-aligned Processing

IP.com Disclosure Number: IPCOM000037778D
Original Publication Date: 1989-Jun-01
Included in the Prior Art Database: 2005-Jan-30
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Kuech, TF: AUTHOR [+2]

Abstract

Disclosed is a process for forming, during epitaxial deposition, structures suitable for self-aligned processing. This is done without the necessity of complex lithography and alignment procedures.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

Selectively Grown Epitaxial Structure for Self-aligned Processing

Disclosed is a process for forming, during epitaxial deposition, structures suitable for self-aligned processing. This is done without the necessity of complex lithography and alignment procedures.

Selective epitaxy with no deposition on the dielectrically- masked areas has been demonstrated using MOVPE with a modified growth chemistry. The deposited material can be made to grow out of an opening and extend laterally over the dielectric (1 in figure). Depending on growth conditions, this growth may be isotropic or proceed along specific crystallographic planes. This lateral growth may be used for self-alignment purposes. The extent of the lateral growth region is determined by the growth conditions and does not require any difficult alignment or lithography procedures.

An example using this technique is a self-aligned epitaxially grown gate for a SISFET (Semiconductor-Insulator-Semiconductor Field Effect Transistor). In this structure, the insulating layer is first grown so as not to extend above the dielectric film (2 in figure). The conductive gate is then grown such that it extends laterally over the dielectric film (3 in figure). This gate can then be used as an implantation mask to form self-aligned ohmic contact regions to the device (4 in figure).

Disclosed anonymously.

1