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Gallium Arsenide (GaAs) Self-Aligned Metal Semiconductor Field Effect Transistor (MESFET)

IP.com Disclosure Number: IPCOM000037852D
Original Publication Date: 1989-Jul-01
Included in the Prior Art Database: 2005-Jan-30
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Solomon, PM: AUTHOR [+2]

Abstract

The resistance of the ungated region can be reduced in a self- aligned manner by placing a molybdenum germanium layer over the gate source and drain regions as shown in Fig. 1.

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Gallium Arsenide (GaAs) Self-Aligned Metal Semiconductor Field Effect Transistor (MESFET)

The resistance of the ungated region can be reduced in a self- aligned manner by placing a molybdenum germanium layer over the gate source and drain regions as shown in Fig. 1.

The structure is heated to about 700oC producing a partial diffusion into the GaAs. The remaining MoGe is removed, ohmic contacts evaporated and heat treated to produce the structure of Fig. 2.

The ungated region is doped heavily enough to reduce parasitic gate to source or drain resistance yet not so heavily doped as to result in very low breakdown voltages.

Disclosed anonymously.

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