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Resist Patterning by Dry Development

IP.com Disclosure Number: IPCOM000037925D
Original Publication Date: 1989-Aug-01
Included in the Prior Art Database: 2005-Jan-31
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Babich, ED: AUTHOR [+4]

Abstract

Disclosed is a process to develop resist images by dry development. This process is carried out by pattern exposure followed by incorporation of silicon atoms into the exposed areas.

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Resist Patterning by Dry Development

Disclosed is a process to develop resist images by dry development. This process is carried out by pattern exposure followed by incorporation of silicon atoms into the exposed areas.

The resist material consists of a commercial epoxy-novolak resin and 5% to 10% of a diazo-napthaquinone photoactive compound, PAC, (identical to those used in most commercial positive photoresists) that is then dissolved in a suitable organic solvent such as diglyme. The resist material is coated on the desired substrate and patternwise exposed to UV light. The PAC upon irradiation and hydrolysis forms a carboxylic acid (PAC-A) which reacts with vapors of a difunctional silylation agent (DASB), forming an oligomeric polysilylester (PSE). Such a chemical reaction forms a protective layer (MASK) which is much more stable in an oxygen plasma as compared to the non-silylated (unexposed) regions. The treated resist film is then subjected to an oxygen plasma; the plasma removes the unexposed areas of the resist film leaving the developed pattern. The chemistry of the vapor phase reaction is described in Fig. 1.

The process is carried out under vacuum with only a small amount of vapor from the difunctional silicon agent present, and it requires moderate heating (about 70 C) for the reaction to proceed.

Disclosed anonymously.

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